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第三十四讲 Exploiting Ferroelectric FETs for Non-volatile Logic-in-Memory Circuits

日期: 2018-08-23
撰稿人:

第三十四讲  Exploiting Ferroelectric FETs for Non-volatile Logic-in-Memory Circuits

讲座详情

演讲题目 : Exploiting Ferroelectric FETs for Non-volatile Logic-in-Memory Circuits

演讲时间:2018年8月24日14:00

演讲地点:荷清大厦一层水木会议室

主讲人: Xunzhao Yin

二、主讲人介绍

Xunzhao Yin received his B.S. degree in the department of Electronic Engineering from Tsinghua University, China, in 2013. He is currently pursuing the Ph.D.degree in the department of Computer Science and Engineering, University of Notre Dame, Indiana, USA.

His research interests include hardware security, low-power circuit design and novel computing paradigms with both CMOS and emerging technologies. He has participated several large projects sponsored by DARPA/NSF/SRC, e.g., Center for Low Energy System Technology (LEAST), Center for Extremely Energy Efficient Collective Electronics (EXCEL), and Application and Systems driven Center for Energy-Efficient Integrated NanoTechnologies (ASCENT), where he is exploring novel circuits and architectures based on beyond-CMOS technologies. He has published 8 conference papers at ICCAD, DATE, etc, and 2 journal papers. He received the Outstanding Research Assistant Award in the department of CSE, 3rd place award for 3-minute-thesis Competition at University of Notre Dame, and Bronze medal of Student Research Competition at ICCAD2016, etc.

三、演讲内容

One clear trend in the era of "Internet of Things" (IoT) and "Big Data" is the rapid growth of data-centric applications, in which transferring high volumes of information from/to memory consumes more resources than processing them. Both industry and academia are investigating various types of hardware designs that combine memory and processing as possible solutions to ease the bottle necks induced by data transfers. Logic-in-memory (LiM) where memory and logic elements are closely integrated is one such an approach. Due to the inherent non-volatility exhibited by many beyond-CMOS devices, they are prime choices for implementing low-energy and high-performance LiMs for data-centric applications.

Among the many beyond-CMOS devices considered for LiMs, Ferroelectric field-effect transistors(FeFETs) stand out as one of the most promising devices. FeFETs display unique hysteretic Ids-Vgs characteristics that allow a single FeFET to function as both a switch and a non-volatile storage element. FeFETs have been experimentally fabricated and are being actively investigated by all major semiconductor manufacturers, FeFETs offer the potential to enable area, energy and performance efficient LiM designs. In this talk, I will present two categories of FeFET LiM circuits: (i) ternary content addressable memory (TCAM) which realizes efficient and compact search operations at various levels of memory hierarchy; and (ii) basic logic function units for constructing largerand more complex LiM circuits. I will demonstrate how we enable NV LiM designs with FeFETs, and compare our designs with existing equivalent LiMs to show the advantages of FeFETs over other technologies.

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