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第三十讲 基于新型存储的高能效智慧电子电路与系统的设计挑战

日期: 2018-07-04
撰稿人:

第三十讲  基于新型存储的高能效智慧电子电路与系统的设计挑战

讲座详情

演讲题目:基于新型存储的高能效智慧电子电路与系统的设计挑战

演讲时间:2018年7月2日 10:00-11:00

演讲地点:清华大学罗姆楼 5-206

主讲人: Meng-Fan (Marvin) CHANG  中国台湾清华大学 教授

二、主讲人介绍

Dr. Chang is a full Professor in the Dept. of Electrical Engineering of Tsing Hua University, Taiwan, China. Dr. Change obtained considerable practical experience before joining Tsing Hua University, Taiwan, China in 2006, having spent more than 10 years working in industry.

Between 1997 and 2006, Dr. Chang worked in the development of SRAM/ROM/Flashmacros/compilers at Mentor Graphics (New Jersey, US), TSMC (Taiwan, China), and the Intellectual Property Library Company (Taiwan, China). His research interests include circuit design for volatile and nonvolatile memory, 3D-Memory, nonvolatile and spintronics logics, circuit-device-interactions in non-CMOS devices, memristor circuits, computing-in-memory and neuromorphic circuits for artificial intelligent (AI) chips.

Since 2010, Dr. Chang has authored or co-authored more than 40+ top conference papers (including 14 ISSCC, 15 VLSI Symposia, 8 IEDM, and 5 DAC) as well as 40+ IEEE journal papers and 40+ US patents. He is an associate editor for IEEE TVLSI, and IEEE TCAD. He has been serving on technical program committees for ISSCC, IEDM (Executive committee, Chair of MT sub-committee), DAC, A-SSCC, IEEE CAS Society (Chair Elect of NG-TC), and numerous international conferences. He is a Distinguished Lecturer (DL) for IEEE Circuits and Systems Society (CASS) during 2017-2018. He is the recipient of several prestigious national-level awards in Taiwan, China, including the Outstanding Research Award of MOST-Taiwan (科技部傑出研究獎), Outstanding Electrical Engineering Professor Award, Ta-You Wu Memorial Award (吳大猷先生紀念獎), Academia Sinica Junior Research Investigators Award, Outstanding Chip Design Awards, and Golden Silicon Awards.

三、演讲内容

Memory has become one of the bottlenecks in the development of intelligent computing systems with high bandwidth and low energy consumption. This lecture will address trends in the development of emerging memory, including resistive RAM (ReRAM), STT-MRAM, and phase-change memory (PCM) for intelligent electronics. The fundamental circuits of nonvolatile memory (NVM) and eNVM will be introduced. This lecture will explore the challenges faced by researchers in the circuit designs, circuit-device-interaction, and architecture-circuit interactions for emerging memory. The 2nd part of this lecture will explore the implementation of emerging memory beyond conventional memory applications, such as nonvolatile-logics (nvLogics), nonvolatile processors, and neuromorphic computing for deep learning and artificial intelligent (AI) chips.


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